AP28G40GEM-HF Todos los transistores

 

AP28G40GEM-HF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP28G40GEM-HF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 800 nS
   Coesⓘ - Capacitancia de salida, typ: 38 pF
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP28G40GEM-HF Datasheet (PDF)

 ..1. Size:56K  ape
ap28g40gem-hf.pdf pdf_icon

AP28G40GEM-HF

AP28G40GEM-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VCC High Peak Current Capability C ICP 150AC Low Gate DriveG Strobe Flash Applications CEEGE RoHS Compliant & Halogen-Free SO-8EAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter V

 5.1. Size:94K  ape
ap28g40geo.pdf pdf_icon

AP28G40GEM-HF

AP28G40GEORoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VC High Peak Current Capability ICP 150ACCC Low Gate Drive Strobe Flash Applications CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

 8.1. Size:70K  ape
ap28g45gem.pdf pdf_icon

AP28G40GEM-HF

AP28G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 130A CC 3.3V Gate DriveCCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 8.2. Size:93K  ape
ap28g45geo-hf.pdf pdf_icon

AP28G40GEM-HF

AP28G45GEO-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150AEEG Low Gate Drive Strobe Flash Applications CCCCTSSOP-8GCEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPeak Gate-

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