All IGBT. AP28G40GEM-HF Datasheet

 

AP28G40GEM-HF IGBT. Datasheet pdf. Equivalent


   Type Designator: AP28G40GEM-HF
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 800 nS
   Coesⓘ - Output Capacitance, typ: 38 pF
   Qgⓘ - Total Gate Charge, typ: 86 nC
   Package: SO8

 AP28G40GEM-HF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP28G40GEM-HF Datasheet (PDF)

 ..1. Size:56K  ape
 ap28g40gem-hf.pdf

AP28G40GEM-HF AP28G40GEM-HF

AP28G40GEM-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VCC High Peak Current Capability C ICP 150AC Low Gate DriveG Strobe Flash Applications CEEGE RoHS Compliant & Halogen-Free SO-8EAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter V

 5.1. Size:94K  ape
 ap28g40geo.pdf

AP28G40GEM-HF AP28G40GEM-HF

AP28G40GEORoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VC High Peak Current Capability ICP 150ACCC Low Gate Drive Strobe Flash Applications CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

 8.1. Size:70K  ape
 ap28g45gem.pdf

AP28G40GEM-HF AP28G40GEM-HF

AP28G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 130A CC 3.3V Gate DriveCCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 8.2. Size:93K  ape
 ap28g45geo-hf.pdf

AP28G40GEM-HF AP28G40GEM-HF

AP28G45GEO-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150AEEG Low Gate Drive Strobe Flash Applications CCCCTSSOP-8GCEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPeak Gate-

Datasheet: RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , IRGP4063 , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 .

 

 
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