HGT1S7N60C3DS9A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S7N60C3DS9A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 60 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 11.5 nS

Encapsulados: TO263

  📄📄 Copiar 

 Búsqueda de reemplazo de HGT1S7N60C3DS9A IGBT

- Selecciónⓘ de transistores por parámetros

 

HGT1S7N60C3DS9A datasheet

 1.1. Size:306K  1
 hgtp7n60c3d hgt1s7n60c3ds.pdf pdf_icon

HGT1S7N60C3DS9A

HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 14A, 600V at TC = 25oC The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC of MOSFETs

 1.2. Size:869K  1
 hgtp7n60c3d hgt1s7n60c3d hgt1s7n60c3ds.pdf pdf_icon

HGT1S7N60C3DS9A

 1.3. Size:557K  fairchild semi
 hgt1s7n60c3ds hgtp7n60c3d.pdf pdf_icon

HGT1S7N60C3DS9A

September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha

MOSTRAR MÁS

Otros transistores... HGT1S5N120CNS, HGT1S7N60A4DS, HGT1S7N60B3, HGT1S7N60B3D, HGT1S7N60B3DS, HGT1S7N60B3S, HGT1S7N60C3D, HGT1S7N60C3DS, BT40T60ANF, HGT5A40N60A4D, HGT1Y40N60A4D, HGT5A40N60A4, HGTD10N40F1, HGTD10N40F1S, HGTD10N40F1S9A, HGTD10N50F1, HGTD10N50F1S