T1200TB25A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: T1200TB25A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 5900 W
|Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 2500 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
T1200TB25A Datasheet (PDF)
t1200tb25a.pdf

Date:- 12 Jan, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
ixa20pt1200lb.pdf

IXA20PT1200LBtentativeVCES = 2x 1200VXPT IGBTI= 28 AC25VCE(sat) = 1.8VISOPLUSSurface Mount Power DevicePhase leg SCR / IGBTPart numberIXA20PT1200LBBackside: isolated9E32664113276458Features / Advantages: Applications: Package: SMPD XPT IGBT Phaseleg Isolation Voltage: V~3000 - low saturation voltage - buck-boost chopper Indus
t1200eb45e.pdf

Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: DIM1600ECM17-A | IGP50N60T | IGP10N60T
History: DIM1600ECM17-A | IGP50N60T | IGP10N60T



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793 | d965