HGT5A40N60A4D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT5A40N60A4D
Tipo de transistor: IGBT + Diode
Código de marcado: 40N60A4D
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Qgⓘ - Carga total de la puerta, typ: 350 nC
Paquete / Cubierta: TO247
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HGT5A40N60A4D Datasheet (PDF)
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HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15
Otros transistores... HGT1S7N60A4DS , HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A , IKW75N60T , HGT1Y40N60A4D , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2