HGT5A40N60A4D Datasheet. Specs and Replacement

Type Designator: HGT5A40N60A4D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Package: TO247

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HGT5A40N60A4D datasheet

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HGT5A40N60A4D

HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40A The HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20A gated high voltage switching devices combining the best 600V Switching SOA Capability features of a MOSFET and a bipolar transistor. These de... See More ⇒

 9.1. Size:164K  fairchild semi
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HGT5A40N60A4D

HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oC Punch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capability of the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15... See More ⇒

Specs: HGT1S7N60A4DS, HGT1S7N60B3, HGT1S7N60B3D, HGT1S7N60B3DS, HGT1S7N60B3S, HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A, FGA60N65SMD, HGT1Y40N60A4D, HGT5A40N60A4, HGTD10N40F1, HGTD10N40F1S, HGTD10N40F1S9A, HGTD10N50F1, HGTD10N50F1S, HGTD10N50F1S9A

Keywords - HGT5A40N60A4D transistor spec

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