RJP4010AGE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP4010AGE
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1.6 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.2 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: TSOJ8
Búsqueda de reemplazo de RJP4010AGE - IGBT
RJP4010AGE Datasheet (PDF)
rjp4010age.pdf
Preliminary Datasheet RJP4010AGE R07DS0371EJ0400Rev.4.00400V, 150A, IGBT for Strobe Flash Dec 28, 2012Features Ultra small surface mount package (TSOJ-8) VCES: 400 V ICM: 150 A @VGE = 3 V, Tc = 70C, CM = 100 F Drive voltage: 3.0 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code: PTSJ0008JA-A(Package name: TSOJ-8)8 7 6
rjp4009ans.pdf
Preliminary Datasheet RJP4009ANS R07DS0370EJ0200Rev.2.00Nch IGBT for Strobe Flash Apr 27, 2011Features Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A @Tc = 70C, CM = 400 F Drive voltage: 2.5 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code: PVSN0008JA-A(Package name: VSON-8)8 75 6 51, 2, 3 :
rjp4007ans.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , IXGH60N60 , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 .
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