RJP4010AGE Specs and Replacement
Type Designator: RJP4010AGE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1.6 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
Package: TSOJ8 RJP4010AGE Substitution - IGBT ⓘ Cross-Reference Search
RJP4010AGE datasheet
rjp4010age.pdf
Preliminary Datasheet RJP4010AGE R07DS0371EJ0400 Rev.4.00 400V, 150A, IGBT for Strobe Flash Dec 28, 2012 Features Ultra small surface mount package (TSOJ-8) VCES 400 V ICM 150 A @VGE = 3 V, Tc = 70 C, CM = 100 F Drive voltage 3.0 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code PTSJ0008JA-A (Package name TSOJ-8) 8 7 6... See More ⇒
rjp4009ans.pdf
Preliminary Datasheet RJP4009ANS R07DS0370EJ0200 Rev.2.00 Nch IGBT for Strobe Flash Apr 27, 2011 Features Small surface mount package (VSON-8) VCES 400 V ICM 150 A @Tc = 70 C, CM = 400 F Drive voltage 2.5 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code PVSN0008JA-A (Package name VSON-8) 8 7 5 6 5 1, 2, 3 ... See More ⇒
rjp4007ans.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Specs: T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , CRG40T60AN3H , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 .
History: RJH60D3DPP-M0
Keywords - RJP4010AGE transistor spec
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History: RJH60D3DPP-M0
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