NTE3300 Todos los transistores

 

NTE3300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTE3300
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

NTE3300 Datasheet (PDF)

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 nte3300.pdf pdf_icon

NTE3300

NTE3300Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.1. Size:44K  no
 nte3302.pdf pdf_icon

NTE3300

NTE3302Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.2. Size:44K  no
 nte3301.pdf pdf_icon

NTE3300

NTE3301Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.3. Size:45K  no
 nte3303.pdf pdf_icon

NTE3300

NTE3303Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MOSTRAR MÁS

Otros transistores... T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , IHW20N120R3 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF .

History: GT80J101 | APTGF25X120E2 | BLG40T120FUH-F | MMG150S120B6TN | APTLGF210U120T

 

 
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