RJH60D1DPP-E0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60D1DPP-E0
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 30 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 25 pF
Encapsulados: TO220F
Búsqueda de reemplazo de RJH60D1DPP-E0 IGBT
- Selección ⓘ de transistores por parámetros
RJH60D1DPP-E0 datasheet
rjh60d1dpp-e0.pdf
Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100 600V - 10A - IGBT Rev.1.00 Application Inverter Nov 01, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
rjh60d1dpp-m0.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400 600V - 10A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
r07ds0158ej rjh60d1dpp.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
r07ds0157ej rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
Otros transistores... RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , GT30F126 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c1213 transistor | 2sc1400 replacement | 2sb817 | mn2488 datasheet | c2026 transistor | 2n3903 transistor | 2n4360 | 2n2613