RJH60D1DPP-E0
IGBT. Datasheet pdf. Equivalent
Type Designator: RJH60D1DPP-E0
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 30
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic|ⓘ - Maximum Collector Current: 20
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.9
V @25℃
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 13
nS
Coesⓘ - Output Capacitance, typ: 25
pF
Qgⓘ -
Total Gate Charge, typ: 13
nC
Package:
TO220F
RJH60D1DPP-E0
Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJH60D1DPP-E0
Datasheet (PDF)
..1. Size:120K renesas
rjh60d1dpp-e0.pdf 
Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100600V - 10A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
3.1. Size:93K renesas
rjh60d1dpp-m0.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
4.1. Size:82K renesas
r07ds0158ej rjh60d1dpp.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
5.1. Size:81K renesas
r07ds0157ej rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
5.2. Size:102K renesas
rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
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