All IGBT. RJH60D1DPP-E0 Datasheet

 

RJH60D1DPP-E0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60D1DPP-E0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 30
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 13
   Collector Capacity (Cc), typ, pF: 25
   Total Gate Charge (Qg), typ, nC: 13
   Package: TO220F

 RJH60D1DPP-E0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D1DPP-E0 Datasheet (PDF)

 ..1. Size:120K  renesas
 rjh60d1dpp-e0.pdf

RJH60D1DPP-E0 RJH60D1DPP-E0

Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100600V - 10A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech

 3.1. Size:93K  renesas
 rjh60d1dpp-m0.pdf

RJH60D1DPP-E0 RJH60D1DPP-E0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech

 4.1. Size:82K  renesas
 r07ds0158ej rjh60d1dpp.pdf

RJH60D1DPP-E0 RJH60D1DPP-E0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:81K  renesas
 r07ds0157ej rjh60d1dpe.pdf

RJH60D1DPP-E0 RJH60D1DPP-E0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:102K  renesas
 rjh60d1dpe.pdf

RJH60D1DPP-E0 RJH60D1DPP-E0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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