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HGT5A40N60A4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGT5A40N60A4
   Tipo de transistor: IGBT
   Código de marcado: 40N60A4
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Qgⓘ - Carga total de la puerta, typ: 350 nC
   Paquete / Cubierta: TO247

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HGT5A40N60A4 Datasheet (PDF)

 0.1. Size:230K  1
hgt5a40n60a4d hgt1y40n60a4d.pdf

HGT5A40N60A4
HGT5A40N60A4

HGT5A40N60A4D / HGT1Y40N60A4DData Sheet May 2002600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40AThe HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20Agated high voltage switching devices combining the best 600V Switching SOA Capabilityfeatures of a MOSFET and a bipolar transistor. These de

 9.1. Size:164K  fairchild semi
hgtg27n120bn hgt5a27n120bn.pdf

HGT5A40N60A4
HGT5A40N60A4

HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

Otros transistores... HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A , HGT5A40N60A4D , HGT1Y40N60A4D , IRG7IC28U , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS .

 

 
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