IKZ75N65EL5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKZ75N65EL5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 536 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Paquete / Cubierta: TO247
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IKZ75N65EL5 Datasheet (PDF)
ikz75n65el5.pdf

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ikz75n65es5.pdf

IKZ75N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio
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IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKZ75N65EH5650V DuoPack IGBT and diodeHigh speed series fifth generationData sheetIndustrial Power ControlIKZ75N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeFeatures and Bene
Otros transistores... NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , MBQ50T65FDSC , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , NGTB50N60S1WG .
History: APT25GP90BG | FGY100T65SCDT | KP731A | IGW60N60H3 | APT50GS60SRDQ2G | RJH60A83RDPP-M0 | STGP19NC60H
History: APT25GP90BG | FGY100T65SCDT | KP731A | IGW60N60H3 | APT50GS60SRDQ2G | RJH60A83RDPP-M0 | STGP19NC60H



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