IKZ75N65EL5 Todos los transistores

 

IKZ75N65EL5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKZ75N65EL5

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 536 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Coesⓘ - Capacitancia de salida, typ: 150 pF

Encapsulados: TO247

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IKZ75N65EL5 datasheet

 ..1. Size:1857K  infineon
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IKZ75N65EL5

IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKZ75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKZ75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode Featu

 5.1. Size:1427K  infineon
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IKZ75N65EL5

IKZ75N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal current CEsat Plug and play replacement of previous generatio

 5.2. Size:2169K  infineon
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IKZ75N65EL5

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode High speed series fifth generation Data sheet Industrial Power Control IKZ75N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode Features and Bene

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