IKZ75N65EL5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKZ75N65EL5
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEL5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 536 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qgⓘ - Total Gate Charge, typ: 436 nC
Package: TO247
IKZ75N65EL5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKZ75N65EL5 Datasheet (PDF)
ikz75n65el5.pdf
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