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NGTB50N60S1WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB50N60S1WG

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 417

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 47

Capacitancia de salida (Cc), pF: 252

Empaquetado / Estuche: TO247

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NGTB50N60S1WG Datasheet (PDF)

1.1. ngtb50n60swg.pdf Size:139K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

1.2. ngtb50n60l2.pdf Size:243K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 50 A, 600 V

1.3. ngtb50n60flwg.pdf Size:186K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V • Low Switching Loss R

1.4. ngtb50n60l2wg.pdf Size:243K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 50 A, 600 V

1.5. ngtb50n60s1.pdf Size:87K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

1.6. ngtb50n60fl2wg.pdf Size:237K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

1.7. ngtb50n60s.pdf Size:139K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

1.8. ngtb50n60fwg.pdf Size:182K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat 50 A, 600 V • Low Switching Loss Reduces System Power Dissipation V

1.9. ngtb50n60s1wg.pdf Size:87K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

1.10. ngtb50n60fl2.pdf Size:237K _igbt

NGTB50N60S1WG
NGTB50N60S1WG

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

Otros transistores... IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , 1MBH50D-060 , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E , STGF30H60DF , IKA08N65F5 , IKA08N65H5 , IKA15N65F5 .

 


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