NGTB50N60S1WG - аналоги и описание IGBT

 

NGTB50N60S1WG - аналоги, основные параметры, даташиты

Наименование: NGTB50N60S1WG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 417 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃

tr ⓘ - Время нарастания типовое: 47 nS

Coesⓘ - Выходная емкость, типовая: 252 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB50N60S1WG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB50N60S1WG даташит

 ..1. Size:87K  onsemi
 ngtb50n60s1wg.pdf pdf_icon

NGTB50N60S1WG

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 3.1. Size:87K  onsemi
 ngtb50n60s1.pdf pdf_icon

NGTB50N60S1WG

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 4.1. Size:203K  onsemi
 ngtb50n60swg.pdf pdf_icon

NGTB50N60S1WG

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

 4.2. Size:139K  onsemi
 ngtb50n60s.pdf pdf_icon

NGTB50N60S1WG

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , GT45F122 , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E , STGF30H60DF , IKA08N65F5 , IKA08N65H5 , IKA15N65F5 .

History: NGTB50N60FL2

 

 

 


 
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