NTE3303 Todos los transistores

 

NTE3303 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTE3303
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 35 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 300 nS
   Paquete / Cubierta: TO220F
 

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NTE3303 Datasheet (PDF)

 ..1. Size:45K  no
 nte3303.pdf pdf_icon

NTE3303

NTE3303Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.1. Size:44K  no
 nte3302.pdf pdf_icon

NTE3303

NTE3302Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.2. Size:44K  no
 nte3301.pdf pdf_icon

NTE3303

NTE3301Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.3. Size:44K  no
 nte3300.pdf pdf_icon

NTE3303

NTE3300Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXSR40N60BD1 | RJP60D0DPM | IRG7PH35UD1M

 

 
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