RJQ6008DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJQ6008DPM Datasheet (PDF)

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Preliminary Datasheet RJQ6008DPM R07DS0847EJ0100600V - 10A - IGBT and Diode Rev.1.00High Speed Power Switching Jul 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESA

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Preliminary DatasheetRJQ6003DPM R07DS0846EJ0100600V - 20A - IGBT and Diode Rev.1.00High Speed Power Switching Aug 03, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (a

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Preliminary DatasheetRJQ6015DPM R07DS0848EJ0100600V - 18A - IGBT and Diode Rev.1.00Application: Inverter Jul 27, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

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