RJQ6008DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJQ6008DPM Datasheet (PDF)

..1. Size:115K renesas
rjq6008dpm.pdf pdf_icon

Preliminary Datasheet RJQ6008DPM R07DS0847EJ0100600V - 10A - IGBT and Diode Rev.1.00High Speed Power Switching Jul 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESA

8.1. Size:108K renesas
rjq6003dpm.pdf pdf_icon

Preliminary DatasheetRJQ6003DPM R07DS0846EJ0100600V - 20A - IGBT and Diode Rev.1.00High Speed Power Switching Aug 03, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (a

9.1. Size:116K renesas
rjq6015dpm.pdf pdf_icon

Preliminary DatasheetRJQ6015DPM R07DS0848EJ0100600V - 18A - IGBT and Diode Rev.1.00Application: Inverter Jul 27, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

Otros transistores... RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , GT30G122 , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D .