RJQ6008DPM Datasheet and Replacement
Type Designator: RJQ6008DPM
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 48 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.65 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 68 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO3PFM5
RJQ6008DPM substitution
RJQ6008DPM Datasheet (PDF)
rjq6008dpm.pdf

Preliminary Datasheet RJQ6008DPM R07DS0847EJ0100600V - 10A - IGBT and Diode Rev.1.00High Speed Power Switching Jul 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESA
rjq6003dpm.pdf

Preliminary DatasheetRJQ6003DPM R07DS0846EJ0100600V - 20A - IGBT and Diode Rev.1.00High Speed Power Switching Aug 03, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (a
rjq6015dpm.pdf

Preliminary DatasheetRJQ6015DPM R07DS0848EJ0100600V - 18A - IGBT and Diode Rev.1.00Application: Inverter Jul 27, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: BT15T60A9F | RJH1BF6RDPQ-80
Keywords - RJQ6008DPM transistor datasheet
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History: BT15T60A9F | RJH1BF6RDPQ-80



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