RJQ6008DPM Specs and Replacement
Type Designator: RJQ6008DPM
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 48 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.65 V @25℃
tr ⓘ - Rise Time, typ: 68 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO3PFM5 RJQ6008DPM Substitution - IGBT ⓘ Cross-Reference Search
RJQ6008DPM datasheet
rjq6008dpm.pdf
Preliminary Datasheet RJQ6008DPM R07DS0847EJ0100 600V - 10A - IGBT and Diode Rev.1.00 High Speed Power Switching Jul 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESA... See More ⇒
rjq6003dpm.pdf
Preliminary Datasheet RJQ6003DPM R07DS0846EJ0100 600V - 20A - IGBT and Diode Rev.1.00 High Speed Power Switching Aug 03, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (a... See More ⇒
rjq6015dpm.pdf
Preliminary Datasheet RJQ6015DPM R07DS0848EJ0100 600V - 18A - IGBT and Diode Rev.1.00 Application Inverter Jul 27, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe... See More ⇒
Specs: RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , IHW40T60 , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D .
History: SPT60N65F1A1
Keywords - RJQ6008DPM transistor spec
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History: SPT60N65F1A1
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