IRGB4059DPBF Todos los transistores

 

IRGB4059DPBF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGB4059DPBF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 56 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Coesⓘ - Capacitancia de salida, typ: 25 pF

Encapsulados: TO220AB

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IRGB4059DPBF datasheet

 ..1. Size:290K  international rectifier
 irgb4059dpbf.pdf pdf_icon

IRGB4059DPBF

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.75V n-channel 100% of The Parts Tested for 4X Rat

 5.1. Size:290K  international rectifier
 irgb4059d.pdf pdf_icon

IRGB4059DPBF

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.75V n-channel 100% of The Parts Tested for 4X Rat

 7.1. Size:351K  international rectifier
 irgb4056d.pdf pdf_icon

IRGB4059DPBF

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM)

 7.2. Size:353K  international rectifier
 irgb4056dpbf.pdf pdf_icon

IRGB4059DPBF

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM)

MOSTRAR MÁS

Otros transistores... RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , GT30G122 , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB .

History: MII150-12A4 | MIXA50WB600TED | AUIRGP4063D-E

 

 

 

 

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