All IGBT. IRGB4059DPBF Datasheet

 

IRGB4059DPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGB4059DPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 56 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Qgⓘ - Total Gate Charge, typ: 13 nC
   Package: TO220AB

 IRGB4059DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGB4059DPBF Datasheet (PDF)

 ..1. Size:290K  international rectifier
 irgb4059dpbf.pdf

IRGB4059DPBF IRGB4059DPBF

PD - 97072AIRGB4059DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 4.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.75Vn-channel 100% of The Parts Tested for 4X Rat

 5.1. Size:290K  international rectifier
 irgb4059d.pdf

IRGB4059DPBF IRGB4059DPBF

PD - 97072AIRGB4059DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 4.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.75Vn-channel 100% of The Parts Tested for 4X Rat

 7.1. Size:351K  international rectifier
 irgb4056d.pdf

IRGB4059DPBF IRGB4059DPBF

PD - 97188AIRGB4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

 7.2. Size:353K  infineon
 irgb4056dpbf.pdf

IRGB4059DPBF IRGB4059DPBF

PD - 97188AIRGB4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

Datasheet: RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , STGW60V60DF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB .

 

 
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