STGFW40V60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGFW40V60DF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 62.5 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 220 pF
Encapsulados: TO3PF
Búsqueda de reemplazo de STGFW40V60DF IGBT
- Selección ⓘ de transistores por parámetros
STGFW40V60DF datasheet
stgfw40v60df.pdf
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.8 V (typ.) @ IC = 40 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance Very fast
stgfw40v60df stgw40v60df stgwt40v60df.pdf
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature T = 175 C J Tail-less switching off V = 1.8 V (typ.) @ I = 40 A CE(sat) C Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery
stgb40v60f stgfw40v60f stgp40v60f stgw40v60f.pdf
STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 1 2 2 1 VCE(sat) = 1.8 V (typ.) @ IC = 40 A D PAK TO-3PF Tight parameters distribution TAB Safe paralleling Low thermal resistance 3 3 2 2 1
stgfw40v60f.pdf
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 1 VCE(sat) = 1.8 V (typ.) @ IC = 40 A 3 D2PAK 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal
Otros transistores... IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , IXRH40N120 , RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c






