IKP08N65F5 Todos los transistores

 

IKP08N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKP08N65F5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 70 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 5 nS
   Coesⓘ - Capacitancia de salida, typ: 16 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IKP08N65F5 Datasheet (PDF)

 ..1. Size:2321K  infineon
 ikp08n65f5.pdf pdf_icon

IKP08N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

 6.1. Size:2321K  infineon
 ikp08n65h5.pdf pdf_icon

IKP08N65F5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

Otros transistores... STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IRG4PH50UD , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D , IRGS4610D .

History: IXGQ240N30PB | STGD4M65DF2 | IXGH32N60AS | AUIRG4BC30S-S | XNS40N120T | SKM400GA124D | 6MBP25VBA120-50

 

 
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