IKP08N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKP08N65F5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 70 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 5 nS
Coesⓘ - Capacitancia de salida, typ: 16 pF
Paquete / Cubierta: TO220
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IKP08N65F5 Datasheet (PDF)
ikp08n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal
ikp08n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2