IKP08N65F5 Datasheet. Specs and Replacement
Type Designator: IKP08N65F5 📄📄
Type: IGBT + Anti-Parallel Diode
Marking Code: K08F655
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 18 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
tr ⓘ - Rise Time, typ: 5 nS
Coesⓘ - Output Capacitance, typ: 16 pF
Qg ⓘ - Total Gate Charge, typ: 22 nC
Package: TO220
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IKP08N65F5 datasheet
ikp08n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP08N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP08N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparal... See More ⇒
ikp08n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP08N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP08N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode ... See More ⇒
Specs: STGFW30H65FB, STGFW30V60DF, STGFW30V60F, STGFW40H65FB, STGD6NC60H-1, STGFW40V60F, STGFW40V60DF, RJH60V2BDPE, XNF15N60T, IKP08N65H5, IKD04N60RA, IRG4MC30F, IRGB4610D, IRGR4045D, IRGR4610D, IRGS4045D, IRGS4610D
Keywords - IKP08N65F5 transistor spec
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