IKP08N65F5 Datasheet and Replacement
Type Designator: IKP08N65F5
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 18 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 5 nS
Coesⓘ - Output Capacitance, typ: 16 pF
Package: TO220
- IGBT Cross-Reference
IKP08N65F5 Datasheet (PDF)
ikp08n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal
ikp08n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FB20R06W1E3_B11 | 7MBP100VDA060-50 | SKM400GA124D | BSM50GD60DLC | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
Keywords - IKP08N65F5 transistor datasheet
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History: FB20R06W1E3_B11 | 7MBP100VDA060-50 | SKM400GA124D | BSM50GD60DLC | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH



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