IRGS4045D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGS4045D
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 77 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 29 pF
Qgⓘ - Carga total de la puerta, typ: 13 nC
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IRGS4045D - IGBT
IRGS4045D Datasheet (PDF)
irgs4045d.pdf
IRGS4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHVCES = 600VULTRAFAST SOFT RECOVERY DIODECCIC 6.0A, TC = 100Ctsc > 5s, Tjmax = 175CEGGD2-PakVCE(on) typ. 1.7V EIRGS4045DPbFn-channelApplicationsG C E Appliance Motor DriveGate Colletor Emitter Inverters SMPSFeatures BenefitsHigh efficiency in a wide range of applications and
irgs4064d.pdf
PD - 96424IRGS4064DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 10A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.6V 100% of The Parts Tested for (ILM) n-channel
auirgs4062d1.pdf
AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
irgs4062d.pdf
PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated cur
irgs4056d.pdf
PD - 96197IRGS4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
irgs4086.pdf
PD - 96222IRGB4086PbFPDP TRENCH IGBTIRGS4086PbFKey ParametersFeaturesVCE min 300 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 70Al Optimized for Sustain and Energy Recovery 1.90 VCircuits in PDP ApplicationsIRP max @ TC= 25C A250l Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor Improved Panel Efficiencyl High Repetitive Peak Current Capabi
Otros transistores... RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , GT30F132 , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2