IRGS4045D Todos los transistores

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IRGS4045D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGS4045D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 77

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 12

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 11

Capacitancia de salida (Cc), pF: 29

Empaquetado / Estuche: TO263

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IRGS4045D Datasheet (PDF)

1.1. irgs4045d.pdf Size:332K _igbt

IRGS4045D
IRGS4045D

IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE C C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C E G G D2-Pak VCE(on) typ.  1.7V E IRGS4045DPbF n-channel Applications G C E  Appliance Motor Drive Gate Colletor Emitter  Inverters  SMPS  Features Benefits High efficiency in a wide range of applications and

4.1. irgs4062d.pdf Size:460K _igbt

IRGS4045D
IRGS4045D

PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur

4.2. irgs4056d.pdf Size:404K _igbt

IRGS4045D
IRGS4045D

PD - 96197 IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 12A, TC = 100°C • 5 µS short circuit SOA • Square RBSOA G tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) •

4.3. irgs4064d.pdf Size:293K _igbt

IRGS4045D
IRGS4045D

PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5μs SCSOA E • Square RBSOA VCE(on) typ. = 1.6V • 100% of The Parts Tested for (ILM) n-channel •

4.4. auirgs4062d1.pdf Size:415K _igbt_a

IRGS4045D
IRGS4045D

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

Otros transistores... RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , SKW30N60HS , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD .

 


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