Справочник IGBT. IRGS4045D

 

IRGS4045D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRGS4045D
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 77 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 12 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 11 nS
   Coesⓘ - Выходная емкость, типовая: 29 pF
   Qgⓘ - Общий заряд затвора, typ: 13 nC
   Тип корпуса: TO263

 Аналог (замена) для IRGS4045D

 

 

IRGS4045D Datasheet (PDF)

 ..1. Size:332K  international rectifier
 irgs4045d.pdf

IRGS4045D IRGS4045D

IRGS4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHVCES = 600VULTRAFAST SOFT RECOVERY DIODECCIC 6.0A, TC = 100Ctsc > 5s, Tjmax = 175CEGGD2-PakVCE(on) typ. 1.7V EIRGS4045DPbFn-channelApplicationsG C E Appliance Motor DriveGate Colletor Emitter Inverters SMPSFeatures BenefitsHigh efficiency in a wide range of applications and

 8.1. Size:293K  international rectifier
 irgs4064d.pdf

IRGS4045D IRGS4045D

PD - 96424IRGS4064DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 10A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.6V 100% of The Parts Tested for (ILM) n-channel

 8.2. Size:415K  international rectifier
 auirgs4062d1.pdf

IRGS4045D IRGS4045D

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

 8.3. Size:460K  international rectifier
 irgs4062d.pdf

IRGS4045D IRGS4045D

PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated cur

 8.4. Size:404K  international rectifier
 irgs4056d.pdf

IRGS4045D IRGS4045D

PD - 96197IRGS4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

 8.5. Size:317K  international rectifier
 irgs4086.pdf

IRGS4045D IRGS4045D

PD - 96222IRGB4086PbFPDP TRENCH IGBTIRGS4086PbFKey ParametersFeaturesVCE min 300 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 70Al Optimized for Sustain and Energy Recovery 1.90 VCircuits in PDP ApplicationsIRP max @ TC= 25C A250l Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor Improved Panel Efficiencyl High Repetitive Peak Current Capabi

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