STGFW80V60F Todos los transistores

 

STGFW80V60F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGFW80V60F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 79 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 390 pF
   Paquete / Cubierta: TO3PF
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STGFW80V60F Datasheet (PDF)

 ..1. Size:1643K  st
stgfw80v60f.pdf pdf_icon

STGFW80V60F

STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati

 9.1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGFW80V60F

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 9.2. Size:1573K  st
stgfw40h65fb.pdf pdf_icon

STGFW80V60F

STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution

 9.3. Size:1472K  st
stgfw30v60f.pdf pdf_icon

STGFW80V60F

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

Otros transistores... IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D , IRGS4610D , FGW75N60HD , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD , IRGB4615D , IRGS4615D .

History: MMG75WD120XB6T4N | DAHF100G120SA | MMG400D120UA6TC

 

 
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