STGFW80V60F Todos los transistores

 

STGFW80V60F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGFW80V60F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 79 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 390 pF
   Paquete / Cubierta: TO3PF
 

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Principales características: STGFW80V60F

 ..1. Size:1643K  st
stgfw80v60f.pdf pdf_icon

STGFW80V60F

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance 3 3 Applicati

 9.1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGFW80V60F

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio

 9.2. Size:1573K  st
stgfw40h65fb.pdf pdf_icon

STGFW80V60F

STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 High speed switching series 3 Minimized tail current 2 1 Very low saturation voltage VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A Tight parameters distribution

 9.3. Size:1472K  st
stgfw30v60f.pdf pdf_icon

STGFW80V60F

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App

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History: STGFW30H65FB

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