Справочник IGBT. STGFW80V60F

 

STGFW80V60F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: STGFW80V60F

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 79

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.15

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 80

Максимальная температура перехода (Tj): 175

Время нарастания: 30

Емкость коллектора (Cc), pf: 390

Корпус: TO3PF

Аналог (замена) для STGFW80V60F  

 

 

STGFW80V60F Datasheet (PDF)

1.1. stgfw80v60f.pdf Size:1643K _igbt

STGFW80V60F
STGFW80V60F

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • Tail-less switching off 3 • VCE(sat) = 1.85 V (typ.) @ IC = 80 A 2 1 • Tight parameters distribution TAB TO-3PF • Safe paralleling • Low thermal resistance 3 3 Applicati

5.1. stgfw30nc60v.pdf Size:751K _igbt

STGFW80V60F
STGFW80V60F

STGFW30NC60V 30 A - 600 V - very fast IGBT Datasheet - production data Features ■ High frequency operation up to 50 kHz ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ High current capability 1 1 1 Applications 3 2 ■ High frequency inverters 1 ■ UPS, motor drivers TO3-PF ■ HF, SMPS and PFC in both hard switch and resonant topologies Description

5.2. stgfw40v60f.pdf Size:1889K _igbt

STGFW80V60F
STGFW80V60F

STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C 1 1 1 • Tail-less switching off 3 1 • VCE(sat) = 1.8 V (typ.) @ IC = 40 A 3 D2PAK 2 1 • Tight parameters distribution TAB TO-3PF • Safe paralleling • Low thermal

 5.3. stgfw30v60df.pdf Size:1314K _igbt

STGFW80V60F
STGFW80V60F

STGFW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 1 1 • Tight parameters distribution 3 • Safe paralleling 2 • Low thermal resistance 1 • Very fast soft recovery antiparallel diode TO-3P

5.4. stgfw20v60f.pdf Size:1613K _igbt

STGFW80V60F
STGFW80V60F

STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • Very high speed switching series 3 • Tail-less switching off 2 • Low saturation voltage: VCE(sat) = 1.8 V (typ.) 1 TO-3PF @ IC = 20 A TAB • Tight parameters distribution • Safe par

 5.5. stgfw40h65fb.pdf Size:1573K _igbt

STGFW80V60F
STGFW80V60F

STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • High speed switching series 3 • Minimized tail current 2 1 • Very low saturation voltage: VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A • Tight parameters distribution •

5.6. stgfw20v60df.pdf Size:1465K _igbt

STGFW80V60F
STGFW80V60F

STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 20 A 1 1 1 • Tight parameters distribution 3 • Safe paralleling 2 • Low thermal resistance 1 • Very fast so

5.7. stgfw40v60df.pdf Size:1828K _igbt

STGFW80V60F
STGFW80V60F

STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • Tail-less switching off 3 • VCE(sat) = 1.8 V (typ.) @ IC = 40 A 2 1 • Tight parameters distribution TAB TO-3PF • Safe paralleling • Low thermal resistance • Very fast

5.8. stgfw30v60f.pdf Size:1472K _igbt

STGFW80V60F
STGFW80V60F

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • Tail-less switching off 3 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF • Tight parameters distribution Tab • Safe paralleling • Low thermal resistance 3 3 2 2 App

5.9. stgfw30h65fb.pdf Size:1635K _igbt

STGFW80V60F
STGFW80V60F

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 3 • Minimized tail current 2 1 • VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF • Tight parameters distribution 1 1 1 • Safe paralleling 3 • Low t

5.10. stgfw20h65fb.pdf Size:1497K _igbt

STGFW80V60F
STGFW80V60F

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TAB Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 3 • Minimized tail current 2 1 • VCE(sat) = 1.55 V (typ.) @ IC = 20 A TO-3P • Tight parameters distribution 1 1 1 • Safe paralleling 3 • Low th

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 

 

 

 
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