MG1215H-XBN2MM Todos los transistores

 

MG1215H-XBN2MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG1215H-XBN2MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 105 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de MG1215H-XBN2MM - IGBT

 

MG1215H-XBN2MM Datasheet (PDF)

 ..1. Size:1806K  littelfuse
mg1215h-xbn2mm.pdf

MG1215H-XBN2MM
MG1215H-XBN2MM

Power Module1200V 15A IGBT ModuleRoHSMG1215H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff

 8.1. Size:547K  littelfuse
mg12150d-ba1mm.pdf

MG1215H-XBN2MM
MG1215H-XBN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150D-BA1MMFeatures Ultra low loss Positive temperature coeficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics

 8.2. Size:1452K  littelfuse
mg12150w-xn2mm.pdf

MG1215H-XBN2MM
MG1215H-XBN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr

 8.3. Size:1343K  littelfuse
mg12150s-bn2mm.pdf

MG1215H-XBN2MM
MG1215H-XBN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAg

Otros transistores... RJH3077 , RJP63G4 , NTE3310 , KE703A , IKD06N60RA , IRGB4715D , IRGS4715D , IRGS4064D , FGH60N60SMD , IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , STGD3NC120H , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 .

 

 
Back to Top

 


MG1215H-XBN2MM
  MG1215H-XBN2MM
  MG1215H-XBN2MM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top