MG1215H-XBN2MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG1215H-XBN2MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 105 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Paquete / Cubierta: MODULE
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MG1215H-XBN2MM Datasheet (PDF)
mg1215h-xbn2mm.pdf
Power Module1200V 15A IGBT ModuleRoHSMG1215H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff
mg12150d-ba1mm.pdf
Power Module1200V 150A IGBT ModuleRoHSMG12150D-BA1MMFeatures Ultra low loss Positive temperature coeficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
mg12150w-xn2mm.pdf
Power Module1200V 150A IGBT ModuleRoHSMG12150W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr
mg12150s-bn2mm.pdf
Power Module1200V 150A IGBT ModuleRoHSMG12150S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAg
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