RJH60A85RDPE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60A85RDPE  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 113 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 48 pF

Encapsulados: TO263

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RJH60A85RDPE datasheet

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 rjh60a85rdpe.pdf pdf_icon

RJH60A85RDPE

Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160 ns

 3.1. Size:120K  renesas
 rjh60a85rdpp-m0.pdf pdf_icon

RJH60A85RDPE

Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160

 7.1. Size:110K  renesas
 rjh60a83rdpe.pdf pdf_icon

RJH60A85RDPE

Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130 ns

 7.2. Size:119K  renesas
 rjh60a83rdpp-m0.pdf pdf_icon

RJH60A85RDPE

Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130

MOSTRAR MÁS

Otros transistores... IRGS4715D, IRGS4064D, MG1215H-XBN2MM, IKP15N65F5, IKP15N65H5, MMG15H120XB6TN, STGD3NC120H, RJP6016JPE, BT40T60ANF, RJH60V3BDPE, IRG7PH28UD1, NGD18N45, NGD18N45CLBT4G, NGD8201B, NGD8201BNT4G, STGB10H60DF, STGB15H60DF