RJH60A85RDPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60A85RDPE
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 113 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 48 pF
Qgⓘ - Carga total de la puerta, typ: 56 nC
Paquete / Cubierta: TO263
Búsqueda de reemplazo de RJH60A85RDPE - IGBT
RJH60A85RDPE Datasheet (PDF)
rjh60a85rdpe.pdf
Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160 ns
rjh60a85rdpp-m0.pdf
Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160
rjh60a83rdpe.pdf
Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130 ns
rjh60a83rdpp-m0.pdf
Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2