NGD8201BNT4G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGD8201BNT4G
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 18 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Coesⓘ - Capacitancia de salida, typ: 75 pF
Encapsulados: TO252
Búsqueda de reemplazo de NGD8201BNT4G IGBT
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NGD8201BNT4G datasheet
ngd8201bnt4g.pdf
NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO
ngd8201b.pdf
NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO
ngd8201n ngd8201an.pdf
NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A
ngd8201a.pdf
NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A
Otros transistores... STGD3NC120H , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , IHW20N120R3 , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 .
History: STGB10H60DF
History: STGB10H60DF
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