NGD8201BNT4G Todos los transistores

 

NGD8201BNT4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGD8201BNT4G
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 18 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 75 pF
   Paquete / Cubierta: TO252
 

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NGD8201BNT4G Datasheet (PDF)

 ..1. Size:81K  onsemi
 ngd8201bnt4g.pdf pdf_icon

NGD8201BNT4G

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 6.1. Size:81K  onsemi
 ngd8201b.pdf pdf_icon

NGD8201BNT4G

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 7.1. Size:121K  1
 ngd8201n ngd8201an.pdf pdf_icon

NGD8201BNT4G

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 7.2. Size:123K  onsemi
 ngd8201a.pdf pdf_icon

NGD8201BNT4G

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

MOSTRAR MÁS

Otros transistores... STGD3NC120H , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , SGT50T65FD1PN , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 .

History: IRG4PC40FDPBF | IXGT40N60B2D1 | 2MBI300NB-060 | SKM400GB123D | SKM195GAL063DN | MG100Q2YS51 | APTGT300SK120D3

 

 
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