Справочник IGBT. NGD8201BNT4G

 

NGD8201BNT4G Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGD8201BNT4G
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 400 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 18 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 75 pF
   Тип корпуса: TO252
     - подбор IGBT транзистора по параметрам

 

NGD8201BNT4G Datasheet (PDF)

 ..1. Size:81K  onsemi
 ngd8201bnt4g.pdf pdf_icon

NGD8201BNT4G

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 6.1. Size:81K  onsemi
 ngd8201b.pdf pdf_icon

NGD8201BNT4G

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 7.1. Size:121K  1
 ngd8201n ngd8201an.pdf pdf_icon

NGD8201BNT4G

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 7.2. Size:123K  onsemi
 ngd8201a.pdf pdf_icon

NGD8201BNT4G

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMGT15H120XB6C | IXGH40N60C2 | NCE100ED65VT4 | IRG4PC40FDPBF | IXYK100N120C3 | SG20N12DT | 2MBI300NB-060

 

 
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