STGB10H60DF Todos los transistores

 

STGB10H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB10H60DF
   Tipo de transistor: IGBT + Diode
   Código de marcado: GB10H60DF
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 6.9 nS
   Coesⓘ - Capacitancia de salida, typ: 60 pF
   Qgⓘ - Carga total de la puerta, typ: 57 nC
   Paquete / Cubierta: TO263

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STGB10H60DF Datasheet (PDF)

 ..1. Size:1722K  st
stgb10h60df.pdf

STGB10H60DF
STGB10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont

 8.1. Size:605K  st
stgb10nc60kd.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 8.2. Size:350K  st
stgb10nb40lz.pdf

STGB10H60DF
STGB10H60DF

STGB10NB40LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB10NB40LZ CLAMPED

 8.3. Size:604K  st
stgb10nb60s.pdf

STGB10H60DF
STGB10H60DF

STGB10NB60SSTGP10NB60S16 A, 600 V, low drop IGBTFeatures Low on-voltage drop (VCE(sat)) High current capabilityTABTABApplications3 Light dimmer 3 121 Static relaysTO-220 D2PAK Motor driveDescriptionThis IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagramdrop in low-fr

 8.4. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 8.5. Size:94K  st
stgb10n60.pdf

STGB10H60DF
STGB10H60DF

STGP10N60L N-CHANNEL 10A - 600V - TO-220LOGIC LEVEL IGBTTYPE VCES VCE(sat) ICSTGP10N60L 600 V

 8.6. Size:608K  st
stgb10nc60k stgp10nc60k stgd10nc60k.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

 8.7. Size:1653K  st
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

 8.8. Size:1136K  st
stgb10m65df2.pdf

STGB10H60DF
STGB10H60DF

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat)3 Low thermal resistance 1 Soft and very

 8.9. Size:747K  st
stgb10nb37lz stgp10nb37lz.pdf

STGB10H60DF
STGB10H60DF

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

 8.10. Size:363K  st
stgb10nc60k.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60K10 A, 600 V short-circuit rugged IGBTFeatures Low on voltage drop (VCESAT) Short-circuit withstand time 10 sTABApplications High frequency motor controls31 SMPS and PFC in both hard switch and resonant topologiesDPAK Motor drivesDescriptionThis device utilizes the advanced Power MESH Figure 1. Internal schematic diagramprocess r

 8.11. Size:767K  st
stgb10nc60hd.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

 8.12. Size:747K  st
stgb10nb37lz.pdf

STGB10H60DF
STGB10H60DF

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

 8.13. Size:433K  st
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf

STGB10H60DF
STGB10H60DF

STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V

 8.14. Size:768K  st
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf

STGB10H60DF
STGB10H60DF

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

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