STGB10H60DF Todos los transistores

 

STGB10H60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGB10H60DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 115 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 6.9 nS

Coesⓘ - Capacitancia de salida, typ: 60 pF

Encapsulados: TO263

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STGB10H60DF datasheet

 ..1. Size:1722K  st
stgb10h60df.pdf pdf_icon

STGB10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont

 8.1. Size:605K  st
stgb10nc60kd.pdf pdf_icon

STGB10H60DF

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

 8.2. Size:350K  st
stgb10nb40lz.pdf pdf_icon

STGB10H60DF

STGB10NB40LZ N-CHANNEL CLAMPED 20A - D PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED

 8.3. Size:604K  st
stgb10nb60s.pdf pdf_icon

STGB10H60DF

STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features Low on-voltage drop (VCE(sat)) High current capability TAB TAB Applications 3 Light dimmer 3 1 2 1 Static relays TO-220 D2PAK Motor drive Description This IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagram drop in low-fr

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