STGB10H60DF Todos los transistores

 

STGB10H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB10H60DF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 6.9 nS
   Coesⓘ - Capacitancia de salida, typ: 60 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

STGB10H60DF Datasheet (PDF)

 ..1. Size:1722K  st
stgb10h60df.pdf pdf_icon

STGB10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont

 8.1. Size:605K  st
stgb10nc60kd.pdf pdf_icon

STGB10H60DF

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 8.2. Size:350K  st
stgb10nb40lz.pdf pdf_icon

STGB10H60DF

STGB10NB40LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB10NB40LZ CLAMPED

 8.3. Size:604K  st
stgb10nb60s.pdf pdf_icon

STGB10H60DF

STGB10NB60SSTGP10NB60S16 A, 600 V, low drop IGBTFeatures Low on-voltage drop (VCE(sat)) High current capabilityTABTABApplications3 Light dimmer 3 121 Static relaysTO-220 D2PAK Motor driveDescriptionThis IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagramdrop in low-fr

Otros transistores... RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , FGPF4633 , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U .

History: MMG600WB060DAK6EN | IXGK50N60C2D1 | NCE80TC65BT | IKD10N60RF | MIXA450PF1200TSF | IXGT64N60A3 | GA400TD25S

 

 
Back to Top

 


 
.