STGB10H60DF - аналоги, основные параметры, даташиты
Наименование: STGB10H60DF
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 115 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 10 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
tr ⓘ - Время нарастания типовое: 6.9 nS
Coesⓘ - Выходная емкость,
типовая: 60 pF
Тип корпуса: TO263
Аналог (замена) для STGB10H60DF
- подбор ⓘ IGBT транзистора по параметрам
STGB10H60DF даташит
..1. Size:1722K st
stgb10h60df.pdf 

STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont
8.1. Size:605K st
stgb10nc60kd.pdf 

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM
8.2. Size:350K st
stgb10nb40lz.pdf 

STGB10NB40LZ N-CHANNEL CLAMPED 20A - D PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED
8.3. Size:604K st
stgb10nb60s.pdf 

STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features Low on-voltage drop (VCE(sat)) High current capability TAB TAB Applications 3 Light dimmer 3 1 2 1 Static relays TO-220 D2PAK Motor drive Description This IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagram drop in low-fr
8.4. Size:607K st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf 

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM
8.5. Size:94K st
stgb10n60.pdf 

STGP10N60L N-CHANNEL 10A - 600V - TO-220 LOGIC LEVEL IGBT TYPE VCES VCE(sat) IC STGP10N60L 600 V
8.6. Size:608K st
stgb10nc60k stgp10nc60k stgd10nc60k.pdf 

STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25 C @100 C STGB10NC60K 600V
8.7. Size:1653K st
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf 

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IES susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
8.8. Size:1136K st
stgb10m65df2.pdf 

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D PAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and very
8.9. Size:747K st
stgb10nb37lz stgp10nb37lz.pdf 

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
8.10. Size:363K st
stgb10nc60k.pdf 

STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features Low on voltage drop (VCESAT) Short-circuit withstand time 10 s TAB Applications High frequency motor controls 3 1 SMPS and PFC in both hard switch and resonant topologies D PAK Motor drives Description This device utilizes the advanced Power MESH Figure 1. Internal schematic diagram process r
8.11. Size:767K st
stgb10nc60hd.pdf 

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant
8.12. Size:747K st
stgb10nb37lz.pdf 

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
8.13. Size:433K st
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf 

STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D PAK PowerMESH IGBT Table 1 General Features Figure 1 Package TYPE VCES VCE(sat) (Max) IC @25 C @100 C STGP10NB60S 600 V
8.14. Size:768K st
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf 

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant
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