IGP20N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP20N65F5
Tipo de transistor: IGBT + Diode
Código de marcado: G20EF5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 125
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 42
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 11
Capacitancia de salida (Cc), typ, pF: 30
Paquete / Cubierta: TO220
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IGP20N65F5 Datasheet (PDF)
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Otros transistores... NGD18N45 , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , RJH30E2DPP , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ