IGP20N65F5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IGP20N65F5
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 42 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 11 nS
Coesⓘ - Выходная емкость, типовая: 30 pF
Тип корпуса: TO220
- подбор IGBT транзистора по параметрам
IGP20N65F5 Datasheet (PDF)
igp20n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP20N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
igp20n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP20N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi
igp20n60h3 rev1 2g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
igp20n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IGW100N60H3 | IGC36T120T8L | IGC10T65QE | IGC10R60D | DIM1200ASM45-TS001 | DF80R12W2H3_B11 | T1600GB45G
History: IGW100N60H3 | IGC36T120T8L | IGC10T65QE | IGC10R60D | DIM1200ASM45-TS001 | DF80R12W2H3_B11 | T1600GB45G



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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