OM6517SA Todos los transistores

 

OM6517SA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OM6517SA
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 200 nS
   Coesⓘ - Capacitancia de salida, typ: 160 pF
   Paquete / Cubierta: TO254AA
     - Selección de transistores por parámetros

 

OM6517SA Datasheet (PDF)

 ..1. Size:18K  omnirel
 om6517sa.pdf pdf_icon

OM6517SA

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

 7.1. Size:18K  omnirel
 om6517sw.pdf pdf_icon

OM6517SA

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

 9.1. Size:20K  omnirel
 om6510sc.pdf pdf_icon

OM6517SA

OM6510SCOM6511SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery DiodeIn A Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Free Wheeling Diode Availab

 9.2. Size:21K  omnirel
 om6514ss.pdf pdf_icon

OM6517SA

OM6514SSOM6515SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available With Free Wheeling Diodes Available

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXXP50N60B3 | IXDH30N120AU1 | CT20VML-8

 

 
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