Справочник IGBT. OM6517SA

 

OM6517SA - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OM6517SA
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 4 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 200 nS
   Coesⓘ - Выходная емкость, типовая: 160 pF
   Тип корпуса: TO254AA

 Аналог (замена) для OM6517SA

 

 

OM6517SA Datasheet (PDF)

 ..1. Size:18K  omnirel
 om6517sa.pdf

OM6517SA OM6517SA

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

 7.1. Size:18K  omnirel
 om6517sw.pdf

OM6517SA OM6517SA

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

 9.1. Size:20K  omnirel
 om6510sc.pdf

OM6517SA OM6517SA

OM6510SCOM6511SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery DiodeIn A Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Free Wheeling Diode Availab

 9.2. Size:21K  omnirel
 om6514ss.pdf

OM6517SA OM6517SA

OM6514SSOM6515SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available With Free Wheeling Diodes Available

 9.3. Size:21K  omnirel
 om6512sc.pdf

OM6517SA OM6517SA

OM6512SCOM6513SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available With Free Wheeling Diode Available Screened To MIL-S

 9.4. Size:17K  omnirel
 om6516sc.pdf

OM6517SA OM6517SA

OM6516SCOM6520SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened

 9.5. Size:13K  omnirel
 om6518ss.pdf

OM6517SA

OM6518SSOM6519SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Availa

Другие IGBT... STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , CRG40T60AK3HD , OM6520SC , STGD19N40LZ , KGF15N120NDS , IRGB4620D , IRGP4620D , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN .

 

 
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