OM6520SC Todos los transistores

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OM6520SC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OM6520SC

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 4

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 25

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 200

Capacitancia de salida (Cc), pF: 160

Empaquetado / Estuche: TO258AA

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OM6520SC Datasheet (PDF)

1.1. om6520sc.pdf Size:17K _igbt

OM6520SC
OM6520SC

OM6516SC OM6520SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated IGBTs In A Hermetic Package • High Input Impedance • Low On-Voltage • High Current Capability • High Switching Speed • Low Tail Current • Available With Free Wheeling Diode • Available Screened

5.1. om6524st.pdf Size:23K _omnirel

OM6520SC
OM6520SC

OM6524ST OM6525SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-19500, TX, TXV And S

5.2. om6527sc.pdf Size:21K _omnirel

OM6520SC
OM6520SC

OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Available Screened To MIL-S-19500, TX

5.3. om6529ss.pdf Size:21K _omnirel

OM6520SC
OM6520SC

OM6529SS OM6530SS INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Available Screened To MIL

5.4. om6526sa.pdf Size:18K _igbt

OM6520SC
OM6520SC

OM6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated IGBTs In A Hermetic Package • High Input Impedance • Low On-Voltage • High Current Capability • High Switching Speed • Low Tail Current • Available Screened To MIL-S-19500, TX, TXV and S Lev

Otros transistores... IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , IXGR32N60CD1 , STGD19N40LZ , KGF15N120NDS , IRGB4620D , IRGP4620D , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH .

 


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Introduzca al menos 1 números o letras