OM6520SC Todos los transistores

 

OM6520SC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OM6520SC

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4 V @25℃

trⓘ - Tiempo de subida, typ: 200 nS

Coesⓘ - Capacitancia de salida, typ: 160 pF

Encapsulados: TO258AA

 Búsqueda de reemplazo de OM6520SC IGBT

- Selección ⓘ de transistores por parámetros

 

OM6520SC datasheet

 ..1. Size:17K  omnirel
 om6520sc.pdf pdf_icon

OM6520SC

OM6516SC OM6520SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened

 9.1. Size:18K  omnirel
 om6526sa.pdf pdf_icon

OM6520SC

OM6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

 9.2. Size:23K  omnirel
 om6524st.pdf pdf_icon

OM6520SC

OM6524ST OM6525SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-1

 9.3. Size:21K  omnirel
 om6529ss.pdf pdf_icon

OM6520SC

OM6529SS OM6530SS INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Availa

MOSTRAR MÁS

Otros transistores... IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , IHW20N135R5 , STGD19N40LZ , KGF15N120NDS , IRGB4620D , IRGP4620D , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH .

History: MPMB75B120RH | GT50J341 | APT75GP120JDQ3 | APT45GP120BG | APT50GP60SG | APT50GN120L2DQ2G | APT50GT120B2RG

 

 

 

 

↑ Back to Top
.