IRGP4620D Todos los transistores

 

IRGP4620D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4620D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 140 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 32 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 52 pF

Encapsulados: TO247

 Búsqueda de reemplazo de IRGP4620D IGBT

- Selección ⓘ de transistores por parámetros

 

IRGP4620D datasheet

 ..1. Size:901K  international rectifier
irgp4620d.pdf pdf_icon

IRGP4620D

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100 C E E E E C G C C C G tSC 5 s, TJ(max) = 175 C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

 0.1. Size:966K  infineon
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf pdf_icon

IRGP4620D

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

 8.1. Size:347K  international rectifier
irgp4650d.pdf pdf_icon

IRGP4620D

IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 35A E TO-247AC TO-247AD n-channel IRGP4650DPbF IRGP4650D-EP Applications GC E Industrial Motor Drive Gate Collector Emitter Inverters UPS Weldi

 8.2. Size:154K  international rectifier
irgp460lc.pdf pdf_icon

IRGP4620D

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

Otros transistores... IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ , KGF15N120NDS , IRGB4620D , CRG60T60AK3HD , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA .

History: OM6517SA

 

 

 


History: OM6517SA

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx | 2sc1364 | 2sc2320 | d669a transistor | 2sc1419

 

 

↑ Back to Top
.