IRGP4620D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4620D
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 140 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 32 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 52 pF
Qgⓘ - Carga total de la puerta, typ: 25 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4620D - IGBT
IRGP4620D Datasheet (PDF)
irgp4620d.pdf
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf
IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust
irgp4650d.pdf
IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi
irgp460lc.pdf
PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irgp4660d.pdf
IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi
irgp4640d.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
irgp4630d.pdf
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl
irgp4690d.pdf
IRGP4690DPbFIRGP4690D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 90A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGVCE(on) typ. = 1.70V @ IC = 75A GETO-247AC TO-247ADn-channelIRGP4690DPbF IRGP4690D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldin
irgp4640.pdf
IRGP4640PbFIRGP4640-EPbFINSULATED GATE BIPOLAR TRANSISTORVCES = 600VCCCIC = 40A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGE GVCE(on) typ. = 1.60V @ IC = 24An-channelTO-247AC TO-247ADIRGP4640PbF IRGP4640-EPGC EApplications Gate Collector Emitter Inverters UPS WeldingFeatures BenefitsHigh efficiency in a wide range of applications
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf
IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust
irgp4650dpbf.pdf
IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi
irgp4660dpbf.pdf
IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
Otros transistores... IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ , KGF15N120NDS , IRGB4620D , GT30F131 , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2