IHW20N65R5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW20N65R5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IHW20N65R5 IGBT
IHW20N65R5 PDF specs
ihw20n65r5.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N65R5 Data sheet Industrial Power Control IHW20N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru... See More ⇒
ihw20n120r3 rev2 5g.pdf
IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi... See More ⇒
ihw20n135r5.pdf
IHW20N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering G - very tight parameter distribution E - high ruggedness, temperature stable behav... See More ⇒
ihw20n120r2 h20r1202.pdf
H20R1202 H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - hig... See More ⇒
Otros transistores... IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , CRG40T60AK3HD , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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