IHW20N65R5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW20N65R5 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
trⓘ - Tiempo de subida, typ: 16 nS
Encapsulados: TO247
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IHW20N65R5 datasheet
ihw20n65r5.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N65R5 Data sheet Industrial Power Control IHW20N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru
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IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi
ihw20n135r5.pdf
IHW20N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering G - very tight parameter distribution E - high ruggedness, temperature stable behav
ihw20n120r2 h20r1202.pdf
H20R1202 H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - hig
Otros transistores... IRGS4620D, MMG25H120X6TN, MMG25H120XB6TN, KGT15N135KDH, KGT15N135NDH, STGB30H60DF, STGP30H60DF, IKD10N60RA, CRG75T65AK5HD, IRG4MC50F, SGTN15C120HW, STGB18N40LZT4, STGP30H65F, KGF20N60KDA, KGF20N60PA, NGTB15N120IHL, NGTB15N120FL
History: APT75GT120JU3
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