IHW20N65R5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW20N65R5
Tipo de transistor: IGBT + Diode
Código de marcado: H20ER5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Qgⓘ - Carga total de la puerta, typ: 97 nC
Paquete / Cubierta: TO247
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Otros transistores... IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , NGD8201N , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL .



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