IHW20N65R5 Todos los transistores

 

IHW20N65R5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW20N65R5
   Tipo de transistor: IGBT + Diode
   Código de marcado: H20ER5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 16 nS
   Qgⓘ - Carga total de la puerta, typ: 97 nC
   Paquete / Cubierta: TO247
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IHW20N65R5 Datasheet (PDF)

 ..1. Size:2120K  infineon
ihw20n65r5.pdf pdf_icon

IHW20N65R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N65R5Data sheetIndustrial Power ControlIHW20N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

 8.1. Size:794K  infineon
ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N65R5

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 8.2. Size:1721K  infineon
ihw20n135r5.pdf pdf_icon

IHW20N65R5

IHW20N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:G- very tight parameter distributionE- high ruggedness, temperature stable behav

 8.3. Size:551K  infineon
ihw20n120r2 h20r1202.pdf pdf_icon

IHW20N65R5

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

Otros transistores... IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , NGD8201N , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL .

 

 
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