NGTB20N120IHS Todos los transistores

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NGTB20N120IHS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB20N120IHS

Código: 20N120IHS

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 156

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.1

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 90

Empaquetado / Estuche: TO247

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NGTB20N120IHS Datasheet (PDF)

1.1. ngtb20n120ihr.pdf Size:181K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well http://onsemi.com suited for resonant or soft switching applica

1.2. ngtb20n120ihwg.pdf Size:109K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http://onsemi.com Features

1.3. ngtb20n120ihrwg.pdf Size:181K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well http://onsemi.com suited for resonant or soft switching applica

1.4. ngtb20n120ihs.pdf Size:182K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.5. ngtb20n120ihl.pdf Size:174K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.6. ngtb20n120ih.pdf Size:109K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http://onsemi.com Features

1.7. ngtb20n120ihswg.pdf Size:182K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.8. ngtb20n120l.pdf Size:176K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.9. ngtb20n120lwg.pdf Size:176K _igbt

NGTB20N120IHS
NGTB20N120IHS

NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

Otros transistores... STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , IRG4PC60F , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG .

 


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Introduzca al menos 1 números o letras