NGTB20N120IHS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB20N120IHS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 156 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: TO247

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NGTB20N120IHS datasheet

 ..1. Size:182K  onsemi
 ngtb20n120ihs.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 0.1. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.2. Size:109K  onsemi
 ngtb20n120ih.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features

MOSTRAR MÁS

Otros transistores... STGP30H65F, KGF20N60KDA, KGF20N60PA, NGTB15N120IHL, NGTB15N120FL, NGTB15N120FLWG, NGTB15N120L, NGTB15N120LWG, TGAN60N60F2DS, NGTB20N120IHSWG, AUIRG4PC40S-E, KGF15N120KDA, IRG7PK35UD1, NGTB30N60FLWG, NGTB30N60FWG, NGTG30N60FLWG, NGTG30N60FWG