NGTB20N120IHS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB20N120IHS
Tipo de transistor: IGBT + Diode
Código de marcado: 20N120IHS
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 90 pF
Qgⓘ - Carga total de la puerta, typ: 155 nC
Paquete / Cubierta: TO247
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NGTB20N120IHS Datasheet (PDF)
ngtb20n120ihs.pdf
NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
ngtb20n120ihswg.pdf
NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
ngtb20n120ihl.pdf
NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
ngtb20n120ih.pdf
NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures
ngtb20n120ihwg.pdf
NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures
ngtb20n120ihr.pdf
NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica
ngtb20n120ihrwg.pdf
NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica
Otros transistores... STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , MGD623S , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG .
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