NGTB20N120IHS datasheet, аналоги, основные параметры

Наименование: NGTB20N120IHS  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 156 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

Coesⓘ - Выходная емкость, типовая: 90 pF

Тип корпуса: TO247

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 Аналог (замена) для NGTB20N120IHS

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NGTB20N120IHS даташит

 ..1. Size:182K  onsemi
 ngtb20n120ihs.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 0.1. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.2. Size:109K  onsemi
 ngtb20n120ih.pdf pdf_icon

NGTB20N120IHS

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STGP30H65F, KGF20N60KDA, KGF20N60PA, NGTB15N120IHL, NGTB15N120FL, NGTB15N120FLWG, NGTB15N120L, NGTB15N120LWG, IRG4PC50UD, NGTB20N120IHSWG, AUIRG4PC40S-E, KGF15N120KDA, IRG7PK35UD1, NGTB30N60FLWG, NGTB30N60FWG, NGTG30N60FLWG, NGTG30N60FWG