NGTB30N60FLWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB30N60FLWG
Tipo de transistor: IGBT + Diode
Código de marcado: 30N60FL
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 167 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 31 nS
Coesⓘ - Capacitancia de salida, typ: 170 pF
Qgⓘ - Carga total de la puerta, typ: 170 nC
Paquete / Cubierta: TO247
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NGTB30N60FLWG Datasheet (PDF)
ngtb30n60flwg.pdf
NGTB30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology30 A, 600 V Low Switching Loss R
ngtb30n60fwg.pdf
NGTB30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat30 A, 600 V Low Switching Loss Reduces System Power DissipationV
ngtb30n60ihlwg.pdf
NGTB30N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thehttp://onsemi.comdevice is a
ngtb30n60swg.pdf
NGTB30N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb30n60s.pdf
NGTB30N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
Otros transistores... NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , STGB10NB37LZ , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F .
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