NGTB30N60FLWG Todos los transistores

 

NGTB30N60FLWG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB30N60FLWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 167 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 31 nS
   Coesⓘ - Capacitancia de salida, typ: 170 pF
   Paquete / Cubierta: TO247
 

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NGTB30N60FLWG PDF specs

 ..1. Size:181K  onsemi
 ngtb30n60flwg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 30 A, 600 V Low Switching Loss R... See More ⇒

 4.1. Size:181K  onsemi
 ngtb30n60fwg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 30 A, 600 V Low Switching Loss Reduces System Power Dissipation V... See More ⇒

 5.1. Size:179K  onsemi
 ngtb30n60ihlwg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the http //onsemi.com device is a ... See More ⇒

 5.2. Size:94K  onsemi
 ngtb30n60swg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

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Otros transistores... NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , MGD623S , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F .

 

 
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