NGTB30N60FLWG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB30N60FLWG  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 167 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 31 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO247

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NGTB30N60FLWG datasheet

 ..1. Size:181K  onsemi
 ngtb30n60flwg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 30 A, 600 V Low Switching Loss R

 4.1. Size:181K  onsemi
 ngtb30n60fwg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 30 A, 600 V Low Switching Loss Reduces System Power Dissipation V

 5.1. Size:179K  onsemi
 ngtb30n60ihlwg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the http //onsemi.com device is a

 5.2. Size:94K  onsemi
 ngtb30n60swg.pdf pdf_icon

NGTB30N60FLWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

MOSTRAR MÁS

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