Справочник IGBT. NGTB30N60FLWG

 

NGTB30N60FLWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB30N60FLWG
   Тип транзистора: IGBT + Diode
   Маркировка: 30N60FL
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 31 nS
   Coesⓘ - Выходная емкость, типовая: 170 pF
   Qgⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO247

 Аналог (замена) для NGTB30N60FLWG

 

 

NGTB30N60FLWG Datasheet (PDF)

 ..1. Size:181K  onsemi
 ngtb30n60flwg.pdf

NGTB30N60FLWG NGTB30N60FLWG

NGTB30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology30 A, 600 V Low Switching Loss R

 4.1. Size:181K  onsemi
 ngtb30n60fwg.pdf

NGTB30N60FLWG NGTB30N60FLWG

NGTB30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat30 A, 600 V Low Switching Loss Reduces System Power DissipationV

 5.1. Size:179K  onsemi
 ngtb30n60ihlwg.pdf

NGTB30N60FLWG NGTB30N60FLWG

NGTB30N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thehttp://onsemi.comdevice is a

 5.2. Size:94K  onsemi
 ngtb30n60swg.pdf

NGTB30N60FLWG NGTB30N60FLWG

NGTB30N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

 5.3. Size:94K  onsemi
 ngtb30n60s.pdf

NGTB30N60FLWG NGTB30N60FLWG

NGTB30N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

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