STGB20V60DF Todos los transistores

 

STGB20V60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB20V60DF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 167 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 10 nS
   Coesⓘ - Capacitancia de salida, typ: 110 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

STGB20V60DF Datasheet (PDF)

 ..1. Size:2085K  st
stgb20v60df.pdf pdf_icon

STGB20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

 5.1. Size:1553K  st
stgb20v60f.pdf pdf_icon

STGB20V60DF

STGB20V60F, STGP20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Very high speed switching seriesTABTAB Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A33 Tight parameters distribution211 Safe parallelingD2PAKTO-

 8.1. Size:677K  st
stgb20m65df2.pdf pdf_icon

STGB20V60DF

STGB20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeaturesTAB High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution23 Safer paralleling1 Low thermal resistanceDPAK Soft and very fast recovery antiparallel diodeC(2, TAB)Applications Motor control UPSG(1)

 8.2. Size:462K  st
stgb20nb32lz stgb20nb32lz-1 .pdf pdf_icon

STGB20V60DF

STGB20NB32LZSTGB20NB32LZ-1N-CHANNEL CLAMPED 20A - D2PAK/I2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB32LZ CLAMPED

Otros transistores... NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , MGD623S , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F .

History: BLG15T65FUL-A | FGW40N120H | CM150DX-24S | SKM400GA124D | SMC7G10US60 | AUIRGP65G40D0 | MG06200S-BN4MM

 

 
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