IGW30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW30N60T
Tipo de transistor: IGBT
Código de marcado: G30T60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 187 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 108 pF
Qgⓘ - Carga total de la puerta, typ: 167 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IGW30N60T Datasheet (PDF)
igw30n60t.pdf

IGW30N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
igw30n60tp.pdf

IGBTTRENCHSTOPTM Performance technologyIGW30N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW30N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat
igw30n60h3 rev1 1g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
igw30n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: T0360NB25A | DF900R12IP4D | STGWT30V60F
History: T0360NB25A | DF900R12IP4D | STGWT30V60F



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