IGW30N60T Todos los transistores

 

IGW30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW30N60T

Código: G30T60

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 187

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 60

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 21

Capacitancia de salida (Cc), pF: 108

Empaquetado / Estuche: TO247

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IGW30N60T Datasheet (PDF)

..1. igw30n60t.pdf Size:379K _infineon

IGW30N60T
IGW30N60T

IGP30N60T TrenchStop Series IGW30N60TLow Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

6.1. igw30n60h3 rev1 1g.pdf Size:1561K _infineon

IGW30N60T
IGW30N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

6.2. igw30n60h3.pdf Size:1521K _infineon

IGW30N60T
IGW30N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 7.1. igw30n65l5.pdf Size:1872K _infineon

IGW30N60T
IGW30N60T

IGBTLow V IGBT in TRENCHSTOPTM 5 technologyCE(sat)IGW30N65L5650V IGBT Low V series fifth generationCE(sat)Data sheetIndustrial Power ControlIGW30N65L5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technologyCE(sat)Features and Benefits: CLow V L5 technology offeringCE(sat) Very low collector-emitter saturation voltage VCEsat Best-in-C

Otros transistores... F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IXGH60N60C2 , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL .

 

 
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