IGW30N60T - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IGW30N60T
Тип транзистора: IGBT
Маркировка: G30T60
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 187 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 21 nS
Coesⓘ - Выходная емкость, типовая: 108 pF
Qgⓘ - Общий заряд затвора, typ: 167 nC
Тип корпуса: TO247
IGW30N60T Datasheet (PDF)
igw30n60t.pdf
IGW30N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
igw30n60tp.pdf
IGBTTRENCHSTOPTM Performance technologyIGW30N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW30N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat
igw30n60h3 rev1 1g.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
igw30n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2