IGP30N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP30N65F5
Tipo de transistor: IGBT
Código de marcado: G30EF5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 188 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 9 nS
Coesⓘ - Capacitancia de salida, typ: 45 pF
Qgⓘ - Carga total de la puerta, typ: 65 nC
Paquete / Cubierta: TO220
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IGP30N65F5 Datasheet (PDF)
igp30n65f5.pdf
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Otros transistores... KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T , IHW20N120R2 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL .
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