IGP30N65F5 IGBT. Datasheet pdf. Equivalent
Type Designator: IGP30N65F5
Type: IGBT
Marking Code: G30EF5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 55 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 9 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Qgⓘ - Total Gate Charge, typ: 65 nC
Package: TO220
IGP30N65F5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGP30N65F5 Datasheet (PDF)
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